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1.25G InGaAs PIN Photodiode Chip
KIP-107-1
Description KIP-107-1 is InGaAs PIN Photodiode chip with O75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current High reliability and environmental endurance Wide operating wavelength range from 1.1m to 1.6m Applications Optical Data Communications for 1.25 / 2.5 Gbps Optical power monitoring Absolute Maximum Ratings Symbol Parameter VR Reverse Voltage Pmax Maximun Optical Power Input IF Forward Current Topr Operating Temperature Tstg. Storage Temperature Die- Attach Temperature *1 *1 : Attach Temperature Time 60 seconds max
Ratings 20 30 10 -40 ~ +85 -40 ~ +100 300
Unit V mW mA
Electro-Optical Characteristics Parameter Symbol Min. Typ. Max. 75 Active area(O) D ID Dark Current 0.04 0.5 1.31um 0.85 0.90 Responsivity S 1.55um 0.90 0.95 f h,-3dB 3dB Cut off frequency 2 Capacitance Cp 0.8 1.2 * These specifications are subject to change without notice. Physical Dimension Properties Parameter Active area(O) Chip Size bonding Pad Size (O) Chip Thickness Ordering information KIP KODENSHI InGaAs PIN Photodiode Chip
Unit nA mA/mW GHz pF
Condition @ V R=5V, 25 @ V R=5V, 25 @VR=5, RL=50 @ V R=5V, f=1MHz
Symbol D t
Typ. 75 250x250 80 120
Unit 2
Data Rate M: Monitoring 1: 1.5 Gbps 2: 2.5 Gbps
Carrier type Active area 05: O50 1: chips in gel pack 07: O75 25: 250 sq 2: chips on submounter 3: chips on blue tape
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For more information on other parts available, please visit our website: www.kodenshi.co.kr Rev.002 KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea

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